? semiconductor components industries, llc, 2014 june, 2014 ? rev. 0 1 publication order number: NVA4153N/d NVA4153N, nve4153n small signal mosfet 20 v, 952 ma, single n?channel with esd protection, sc?75 and sc?89 features ? low r ds(on) improving system efficiency ? low threshold voltage, 1.5 v rated ? esd protected gate ? aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? load/power switches ? power supply converter circuits ? battery management ? portables like cell phones, pdas, digital cameras, pagers, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source v oltage v dss 20 v gate?to?source v oltage v gs 6.0 v continuous drain current (note 1) stead y state t a = 25 c i d 952 ma t a = 85 c 737 power dissipation (note 1) steady state p d 361 mw pulsed drain current t p =10 s i dm 3.8 a operating junction and storage temperature t j , t stg ?55 to 175 c continuous source current (body diode) i s 328 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value units junction?to?ambient ? steady state (note 1) sc?75 / sot?416 sc?89 r ja 416 400 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). top view sc?75 / sot?416 case 463 style 5 2 1 http://onsemi.com sc?75, sc?89 drain gate 3 1 2 source 3 r ds(on) typ i d max v (br)dss 0.127 @ 4.5 v 20 v 0.170 @ 2.5 v 952 ma 0.242 @ 1.8 v 1 3 2 n?channel mosfet sc?89 case 463c 2 1 3 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information marking diagram & pin assignment xx m 3 drain 1 gate 2 source xx = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 0.500 @ 1.5 v
NVA4153N, nve4153n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 26 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 18.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v 100 na gate?to?source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.45 0.76 1.1 v negative threshold temperature coefficient v gs(th) /t j ?2.15 mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 600 ma 127 230 m v gs = 2.5 v, i d = 500 ma 170 275 v gs = 1.8 v, i d = 350 ma 242 700 v gs = 1.5 v, i d = 40 ma 500 9500 forward transconductance g fs v ds = 10 v, i d = 400 ma 1.4 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 16 v 110 pf output capacitance c oss 16 reverse transfer capacitance c rss 12 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 0.2 a 1.82 nc threshold gate charge q g(th) 0.2 gate?to?source charge q gs 0.3 gate?to?drain charge q gd 0.42 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 0.2 a, r g = 10 3.7 ns rise time t r 4.4 turn?off delay time t d(off) 25 fall time t f 7.6 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.67 1.1 v t j = 125 c 0.54 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device marking (xx) package shipping ? NVA4153Nt1g vr sc?75 / sot?416 (pb?free) 3000 / tape & reel nve4153nt1g vp sc?89 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NVA4153N, nve4153n http://onsemi.com 3 typical electrical characteristics 0 40 80 120 160 200 0 4 8 12 16 2 0 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0 .7 i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 2.5 v t j = ?55 c t j = 25 c 0.7 0.9 1.1 1.3 1.5 1.7 ?50 ?25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 figure 1. on?region characteristics figure 2. transfer characteristics figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 4.5 v t j = ?55 c t j = 25 c figure 4. on?resistance vs. drain current and temperature figure 5. on?resistance variation with temperature t j , junction temperature ( c) v gs = 4.5 v i d = 0.6 a r ds(on), drain?to?source resistance (normalized) figure 6. capacitance variation drain?to?source voltage (volts) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 2.0 v v gs = 2.6 v to 5.0 v v ds , drain?to?source voltage (volts) i d, drain current (amps) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.4 v 1.6 v 1.8 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 2 .0 v gs , gate?t o?source voltage (volts) i d, drain current (amps) t j = ?55 c t j = 25 c v ds 10 v t j = 125 c 175
NVA4153N, nve4153n http://onsemi.com 4 typical electrical characteristics v sd , source?to?drain voltage (volts) i s , source current (amps) v gs = 0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.2 0.4 0.6 0.8 0 1.6 4 1 0 q g , total gate charge (nc) v gs, gate?to?source vol tage (volts) 1.2 2 3 5 0.4 figure 7. gate?to?source v oltage vs. total gate charge 0.8 q t i d = 0.2 a t a = 25 c 2.0 t j = 25 c t j = 125 c figure 8. diode forward voltage vs. current q gs q gd 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) figure 9. normalized thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
NVA4153N, nve4153n http://onsemi.com 5 package dimensions sc?75/sot?416 case 463 issue f style 5: pin 1. gate 2. source 3. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071
NVA4153N, nve4153n http://onsemi.com 6 package dimensions sc?89 case 463c?03 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c?01 obsolete, new standard 463c?02. dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max g m 0.08 (0.003) x d 3 pl j ?x? ?y? a b y 12 3 n 2 pl k c ?t? seating plane m s 1.10 0.043 0.53 0.020 1.00 0.039 mm inches scale 10:1 0.53 0.020 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nta4153n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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